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this is information on a product in full production. july 2013 docid024040 rev 2 1/19 STH310N10F7-2, sth310n10f7-6 n-channel 100 v, 1.9 m typ., 180 a stripfet? vii deepgate? power mosfet in h 2 pak-2 and h 2 pak-6 packages datasheet - production data figure 1. internal schematic diagram features ? ultra low on-resistance ? 100% avalanche tested applications ? switching applications description these devices utilize the 7 th generation of design rules of st?s proprietary stripfet? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. 1 tab 3 2 h pak-2 2 h pak-6 2 1 tab 7 order codes v ds r ds(on) max. i d STH310N10F7-2 100 v 2.3 m 180 a sth310n10f7-6 table 1. device summary order codes marking package packaging STH310N10F7-2 310n10f7 h 2 pak-2 tape and reel sth310n10f7-6 h 2 pak-6 www.st.com
contents STH310N10F7-2, sth310n10f7-6 2/19 docid024040 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
docid024040 rev 2 3/19 STH310N10F7-2, sth310n10f7-6 electrical ratings 19 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 100 v v gs gate-source voltage 20 v i d (1) 1. current limited by package. drain current (continuous) at t c = 25c 180 a i d (1) drain current (continuous) at t c =100c 120 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 720 a p tot total dissipation at t c = 25c 315 w derating factor 2.1 w/c e as (3) 3. starting t j =25c, i d =60 a, v dd =50 v single pulse avalanche energy (t j = 25 c, l=0.55 mh, i as =65 a ) 1j t j t stg operating junction temperature storage temperature - 55 to 175 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case 0.48 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4 board, 2oz cu thermal resistance junction-pcb max 35 c/w
electrical characteristics STH310N10F7-2, sth310n10f7-6 4/19 docid024040 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 250 a100 v i dss zero gate voltage drain current (v gs = 0) v ds = 100 v 1 a v ds = 100 v, t c = 125c 100 a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.5 3.5 4.5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 60 a 1.9 2.3 m table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 12800 - pf c oss output capacitance - 3500 - pf c rss reverse transfer capacitance -170- pf q g total gate charge v dd = 50 v, i d = 180 a, v gs = 10 v (see figure 14 ) -180- nc q gs gate-source charge - 78 - nc q gd gate-drain charge - 34 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 50 v, i d = 90 a r g =4.7 v gs = 10 v (see figure 13 , figure 18 ) -62-ns t r rise time - 108 - ns t d(off) turn-off delay time - 148 - ns t f fall time - 40 - ns
docid024040 rev 2 5/19 STH310N10F7-2, sth310n10f7-6 electrical characteristics 19 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 180 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) -720a v sd (2) 2. pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd =60 a, v gs =0 - 1.5 v t rr reverse recovery time i sd =180 a, di/dt = 100 a/ s, v dd =80 v, tj=150c (see figure 15 ) -85 ns q rr reverse recovery charge - 200 nc i rrm reverse recovery current - 4.7 a
electrical characteristics STH310N10F7-2, sth310n10f7-6 6/19 docid024040 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100s 1ms 10ms tj=175c tc=25c sinlge pulse am15430v1 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/ tp single pulse =0.5 280tok 5v 6v 7v v gs =10v i d 150 100 50 0 0 4 v ds (v) 8 (a) 2 6 200 250 8v 300 am14734v1 i d 150 100 50 0 0 4 v gs (v) 8 (a) 2 6 200 250 v ds = 2v 300 350 13 5 7 am14735v1 v gs 6 4 2 0 0 q g (nc) (v) 100 8 50 10 v dd =50v i d =180a 150 am14736v1 r ds(on) 2.15 2.10 2.05 2 0 80 i d (a) (m ) 40 120 2.20 2.25 v gs =10v 160 am15431v1
docid024040 rev 2 7/19 STH310N10F7-2, sth310n10f7-6 electrical characteristics 19 figure 8. normalized b vdss vs temperature figure 9. capacitance variations figure 10. source-drain diode forward characteristics figure 11. normalized gate threshold voltage vs temperature figure 12. normalized on-resistance vs temperature 0 -25 75 25 -75 125 bv dss t j (c) (norm) 0.94 0.96 0.98 1.00 1.02 1.04 i d = 1ma am14742v1 c 6000 4000 2000 0 0 40 v ds (v) (pf) 20 8000 60 ciss coss crss 10000 14000 80 100 12000 am14738v1 t j =-50c t j =150c t j =25c v sd 0 40 i sd (a) (v) 160 80 120 0.45 0.55 0.65 0.75 0.85 0.95 1.05 am14739v1 v gs(th) 0.90 0.80 0.70 0.60 t j (c) (norm) 1.0 0 -25 75 25 -75 125 i d = 250a am14741v1 r ds(on) 1.6 1.2 0.8 0.4 0 t j (c) (norm) -25 75 25 -75 125 2.0 i d = 60a am14740v1
test circuits STH310N10F7-2, sth310n10f7-6 8/19 docid024040 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid024040 rev 2 9/19 STH310N10F7-2, sth310n10f7-6 package mechanical data 19 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STH310N10F7-2, sth310n10f7-6 10/19 docid024040 rev 2 table 8. h2pak-2 mechanical data dim. mm min. typ. max. a4.30 - 4.80 a1 0.03 0.20 c1.17 1.37 e4.98 5.18 e0.50 0.90 f0.78 0.85 h 10.00 10.40 h1 7.40 7.80 l 15.30 15.80 l1 1.27 1.40 l2 4.93 5.23 l3 6.85 7.25 l4 1.5 1.7 m2.6 2.9 r0.20 0.60 v0 8
docid024040 rev 2 11/19 STH310N10F7-2, sth310n10f7-6 package mechanical data 19 figure 19. h2pak-2 drawing 8159712_c 8159712_c
package mechanical data STH310N10F7-2, sth310n10f7-6 12/19 docid024040 rev 2 figure 20. h2pak-2 recommended footprint (dimensions are in mm) 8159712_c
docid024040 rev 2 13/19 STH310N10F7-2, sth310n10f7-6 package mechanical data 19 table 9. h2pak-6 mechanical data dim. mm min. typ. max. a4.30 - 4.80 a1 0.03 0.20 c 1.17 1.37 e 2.34 2.74 e1 4.88 5.28 e2 7.42 7.82 e 0.45 0.60 f 0.50 0.70 h 10.00 10.40 h1 7.40 7.80 l 14.75 15.25 l1 1.27 1.40 l2 4.35 4.95 l3 6.85 7.25 l4 1.5 1.75 m 1.90 2.50 r 0.20 0.60 v0 8
package mechanical data STH310N10F7-2, sth310n10f7-6 14/19 docid024040 rev 2 figure 21. h2pak-6 drawing 8159693_rev_e
docid024040 rev 2 15/19 STH310N10F7-2, sth310n10f7-6 package mechanical data 19 figure 22. h2pak-6 recommended footprint (dimensions are in mm) footprint_rev_e
packaging mechanical data STH310N10F7-2, sth310n10f7-6 16/19 docid024040 rev 2 5 packaging mechanical data table 10. tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
docid024040 rev 2 17/19 STH310N10F7-2, sth310n10f7-6 packaging mechanical data 19 figure 23. tape figure 24. reel p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius top cover tape am08852v2 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history STH310N10F7-2, sth310n10f7-6 18/19 docid024040 rev 2 6 revision history table 11. document revision history date revision changes 10-dec-2012 1 initial release. part number(s) previously included in datasheet id 022287 23-jul-2013 2 ? modified: i dss and v gs(th) values on table 4 . ? added: e as value in table 2 ? document status promoted from preliminary data to production data ? minor text changes
docid024040 rev 2 19/19 STH310N10F7-2, sth310n10f7-6 19 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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